You should wait until someone with better experience confirms what I said. A wild guess is that you can use collector-base cut-off current if collector-emiter is not specified because base-emiter junction is in forward bias. The 40 equivalent rbb of the LM194 is considerably lower than that of other small-signal transistors. High-level injection and heavy doping induced band narrowing are introduced. With floating base it will be higher and it'll probably change from static electricity in the air. 291 8 Bipolar Transistor CHAPTER OBJECTIVES This chapter introduces the bipolar junction transistor (BJT) operation and then presents the theory of the bipolar transistor I-V characteristics, current gain, and output conductance. For MMBT3906 it's -50nA max, but only if you apply -3V to emiter base (or you can say +3V to base-emiter). Also they often specify collector-emiter cut-off current for reverse voltage applied to emiter-base. Bipolar transistors Bipolar transistors Buy the latest bipolar transistors from Nexperia Nexperia's low power loss, fast bipolar families of high-voltage transistors are ideally suited to high frequency switching in any powered application. For example for BC556 collector-base cut-off (CE is not specified)current is -15nA max for 25 deg.C and 4000nA for 150degC and it's probably not linear dependency. However, the floating body effect in SOI transistors significantly affects the transistor characteristics, especially the leakage current. However the reverse leakage current is heavily dependant on temperature, so the value is not much of a use. FD-SOI technology has been widely used for high performance and low power CMOS ICs.

Think where current can flow on any of the terminals check it's value in datasheet. The history of electronics is generally composed of three major electron devicesthe vacuum tube 1, the bipolar junction transistor (BJT) 2 and the metaloxidesemiconductor field-effect. A signal of a small amplitude applied to the base is available in the amplified. The three terminals of the BJT are the base, the collector, and the emitter. Because the transistor has 2 junctions it's given depending on where you apply the voltage - collector-emiter, collector-base, emiter-base, depending on how you connect the transistor. PBSS4250X - NPN low VCEsat transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. A bipolar junction transistor is a three-terminal semiconductor device that consists of two p-n junctions which are able to amplify or magnify a signal. I think it should be 'cutoff current' (I guess) what you are looking for.

Lowest leakage bipolar transistor